Random telegraphic signals in rapid thermal annealed silicon-silicon oxidesystem

Random telegraphic signals (RTS) have been observed in large-area aluminium -silicon oxide-silicon capacitors, rapid thermal annealed (RTA) in argon at 600-700 degrees C for 50 s. The noise spectra of these devices at higher b iases showed a Lorenztian spectrum between 30-400 Hz. We suggested that the RTA process has produced weak spots in the devices. The filling and emptyi ng process of a trap near the weak spot modulates the barrier height and re sulted in the RTS and Lorentzian spectrum observed in these devices. (C) 20 00 Elsevier Science S.A. All rights reserved.