Investigation of beam effect on porous silicon

When performing Rutherford Backscattering Spectroscopy (RBS) measurements c ombined with channeling on "columnar" porous silicon (PS) samples with beam aligned to the direction of the pores, a strong beam effect was observed. The minimum yield as a function of the beam dose for different porous sampl es was compared with the yield measured on single crystal silicon. It was d emonstrated that the beam effect strongly depends on the porosity of the sa mple. Bombardment in the random direction caused about 10% higher change in the minimum yield than in the channel direction. (C) 2000 Elsevier Science B.V. All rights reserved.