The Rutherford backscattering spectroscopy (RBS) surface height of a pure b
ulk material can be used as an absolute standard Value to calibrate the det
ector solid angle. This work presents the results of an international colla
boration started at the beginning of 1998 to define the surface height of t
he RES spectrum (H-0) of Si, amorphized by ion implantation to avoid channe
ling. The analyses were performed with 1-3 MeV He beams and 170 degrees sca
ttering angle. The detector solid angle was estimated in the different labo
ratories either by geometrical measurement or by a calibrated standard. The
agreement of the experimental Ho Values is of the order +/-2%, the claimed
accuracy for RES. The results are also consistent at 2% level with both th
e stopping power measurements of Konac et al. (1998), and the measurements
of Lennard et al. (1999). (C) 2000 Elsevier Science B.V. All rights reserve
d.