Argon implantation into GaAs and in situ RBS analysis at 21 and 77 K

In order to investigate the primary effects of ion-solid interaction, low-t emperature implantation and measurement of the irradiated samples without w arming up is necessary. An experimental setup is used, which allows ion imp lantation at constant temperatures between 20 and 300 K and defect analysis by RES without changing the target temperature. First results are presente d for 200 keV Ar+ implantation into GaAs at 21 K and at 77 K. No difference in the damage formation was noticed between implantation at 21 K or at 77 K, indicating that no visible annealing effects occur at these temperatures . During warming up of the samples to room temperature, the relative defect concentration remains unchanged, if its initial value was above 80%, but i t reduces remarkably for lower values of the initial defect concentration. (C) 2000 Elsevier Science B.V. All rights reserved.