He ion beam density effect on damage induced in SiC during Rutherford backscattering measurement

The damage generation of a 3.5 MeV He-4(+) analyzing beam in 4H-SiC during Rutherford backscattering spectrometric (RBS) measurement was studied by ch anneling effect measurements (RBS/C). A dose rate dependence of the minimum yield (chi(min)) was found, i.e., higher damage accumulation occurs with h igher dose rate. On the other hand, the dose dependence shows that in the a pplied dose range (less than or equal to 3 x 10(17) ions/cm(2)) there is an effective dose region where chi(min) increases with dose, whereas it almos t remains unchanged outside of this range. The behavior of analyzing beam i nduced damage was also discussed according to RES observations. (C) 2000 El sevier Science B.V. All rights reserved.