Theory of ion beam induced charge collection in detectors based on the extended Shockley-Ramo theorem

An analysis of the charge collection process induced by focused MeV ion bea ms in semiconductor devices is presented. It is based on the extended Shock ley-Ramo theorem that provides a rigorous mathematical tool for the calcula tion of the induced charge and current under the assumption of a quasi-stea dy-state operation of the semiconductor device. A complete description of t he theory and underlying assumption is given as well as a simple applicatio n of the method aimed to evaluate the main transport properties of fully de pleted semiconductors from the analysis of frontal and lateral ion beam ind uced charge collection (IBICC) measurements. (C) 2000 Elsevier Science B.V. All rights reserved.