Cadmium zinc telluride (CZT) is an emerging material for room temperature r
adiation detectors. In order to optimize the performance of these detectors
, it is important to determine how the electronic properties of CZT are rel
ated to the presence of impurities and defects that are introduced during t
he crystal growth and detector fabrication. At the Sandia microbeam facilit
y IBICC lion beam induced charge collection) and time resolved IBICC (TRIBI
CC) were used to image electronic properties of various CZT detectors. Two-
dimensional areal maps of charge collection efficiency were deduced from th
e measurements. In order to determine radiation damage to the detectors, we
measured the deterioration of the IBICC signal as the function of dose. A
model to explain quantitatively the pattern observed in the charge collecti
on efficiency maps of the damaged detectors has been developed and applied
to the data. (C) 2000 Elsevier Science B.V. All rights reserved.