Study of interdiffusion in amorphous Si/Ge multilayers by Rutherford backscattering spectrometry

Amorphous Si/Ge multilayers of 10-40 nm repeat length were prepared by DC m agnetron sputtering and annealed at 683 K. Rutherford backscattering spectr ometry (RBS) with increased depth resolution was applied to study the inter mixing of the elements. The interdiffusion coefficient was determined by me asuring the intensity of the first Ge peak in the RES spectrum as a functio n of annealing time. An attempt was made to observe the theoretically predi cted change of dimensions of the Si/Ge layers caused by the diffusion asymm etry. (C) 2000 Elsevier Science B.V. All rights reserved.