L. Persson et al., Comparative study of RBS, SIMS and VASE for characterisation of high electron mobility transistors, NUCL INST B, 161, 2000, pp. 482-486
The investigated devices consist of InGaAs/InAlAs multilayer films grown by
molecular beam epitaxy on InP. Results from two samples with the same epit
axial layer composition but with different layer thicknesses are presented.
Of the three techniques investigated, Rutherford backscattering spectromet
ry (RBS), variable angle spectroscopic ellipsometry (VASE) and secondary io
n mass spectrometry (SIMS), VASE appears to be the choice for routine work.
Both RES and SIMS are shown to be valuable complementary techniques. (C) 2
000 Elsevier Science B.V. All rights reserved.