Comparative study of RBS, SIMS and VASE for characterisation of high electron mobility transistors

Authors
Persson, L Lovestam, NG Sodervall, U Watjen, U
Citation
L. Persson et al., Comparative study of RBS, SIMS and VASE for characterisation of high electron mobility transistors, NUCL INST B, 161, 2000, pp. 482-486
Citations number
7
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
ISSN journal
0168583X → ACNP
Volume
161
Year of publication
2000
Pages
482 - 486
Database
ISI
SICI code
0168-583X(200003)161:<482:CSORSA>2.0.ZU;2-N
Abstract
The investigated devices consist of InGaAs/InAlAs multilayer films grown by molecular beam epitaxy on InP. Results from two samples with the same epit axial layer composition but with different layer thicknesses are presented. Of the three techniques investigated, Rutherford backscattering spectromet ry (RBS), variable angle spectroscopic ellipsometry (VASE) and secondary io n mass spectrometry (SIMS), VASE appears to be the choice for routine work. Both RES and SIMS are shown to be valuable complementary techniques. (C) 2 000 Elsevier Science B.V. All rights reserved.