Ion channeling is a rapid method of analysis of crystal damage. The ''two-b
eam approximation" method is typically used for defect profiles evaluation
in single crystals. Another method is based on the evaluation of RBS/channe
Iing spectra by Monte Carlo (MC) simulation. Tn most cases, the channeling
spectra can be well reproduced by MC simulations under the assumption that
the defects are essentially randomly displaced atoms. The criteria for vali
dity of such an approach are given. In addition, the problem of stopping po
wer of the channeled beam in damaged crystals is discussed. (C) 2000 Elsevi
er Science B.V. All rights reserved.