Deuterium ion channeling is applied to study accumulated disorder on Si and
C sublattices in 6H-SiC crystals irradiated with 50 keV He+ ions at 100 an
d 300 K. The relative disorder on both sublattices follows sigmoidal depend
ence on dose. Carbon disorder is higher at low doses, suggesting a smaller
C displacement energy. Above an ion fluence of 1.0 x 10(16) He+/cm(2), more
C defects can be recovered during irradiation, indicating a lower activati
on energy for C migration and recombination. Isochronal annealing data show
that the recovery behavior on the Si and C sublattices is similar. Anneali
ng of a buried amorphous SiC layer, produced at 100 K (2.5 x 10(16) He+/cm(
2)), exhibits an epitaxial growth rate of similar to 0.154 nm/K in the temp
erature range 370-870 K. (C) 2000 Elsevier Science B.V. All rights reserved
.