Determination of lattice displacements in Se implanted InP by RBS and PIXEchanneling experiments

Authors
Schrempel, F Opfermann, T Wendler, E Wesch, W
Citation
F. Schrempel et al., Determination of lattice displacements in Se implanted InP by RBS and PIXEchanneling experiments, NUCL INST B, 161, 2000, pp. 515-519
Citations number
10
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
ISSN journal
0168583X → ACNP
Volume
161
Year of publication
2000
Pages
515 - 519
Database
ISI
SICI code
0168-583X(200003)161:<515:DOLDIS>2.0.ZU;2-F
Abstract
[100] InP single crystals were implanted with 600 keV Se at the critical te mperature of 423 K with ion fluences ranging from 10(13) to 10(15) cm(-2). The damaging of the In and P sublattices and the lattice location of the Se atoms have been studied by RES and PIXE angular scan curves along the [100 ] and [110] directions. The critical angles and minimum yields have been ex tracted for each measurement. An attempt is made to determine the displacem ent distance of the constituent atoms from their lattice site. (C) 2000 Els evier Science B.V. All rights reserved.