A comparative study of different IBA techniques for determining the thickness of thin SiO2 films

Authors
Dytlewski, N Cohen, DD Evans, PJ Prince, KE Collins, GA Barbe, C Cassidy, DJ
Citation
N. Dytlewski et al., A comparative study of different IBA techniques for determining the thickness of thin SiO2 films, NUCL INST B, 161, 2000, pp. 573-577
Citations number
7
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
ISSN journal
0168583X → ACNP
Volume
161
Year of publication
2000
Pages
573 - 577
Database
ISI
SICI code
0168-583X(200003)161:<573:ACSODI>2.0.ZU;2-X
Abstract
Thin nanometre films of SiO2 on Si have been measured using a variety of IB A techniques. High-energy non-Rutherford backscattering and NRA were found to be the most suitable methods for relative thickness determinations, givi ng precisions to similar to 1 nm, comparable to that obtained using ellipso metry. The information obtained is used to determine the oxygen areal densi ty and bulk density of sol-gel films. (C) 2000 Elsevier Science B.V. All ri ghts reserved.