Heavy-ion elastic-recoil detection analysis of doped-silica films for integrated photonics

Photosensitive Ge- and Sn-doped silica films are being developed for integr ated photonics applications. Such films can be deposited by plasma assisted deposition techniques and their initial refractive index and photosensitiv ity are determined by the Ge(Sn):Si:O stoichiometry. The presence of H in t he films is detrimental ti, their performance because it causes optical abs orption in the 1.3-1.5 mu m wavelength range of interest for telecommunicat ions. Characterization of the films therefore requires accurate determinati on of the film composition, including the presence of H. Heavy-ion elastic- recoil detection (ERD) is shown to provide such information in a single mea surement. (C) 2000 Elsevier Science B.V. All rights reserved.