The diffusion of fission product (Cs) implanted into oxide single crystals
(ZrO2 and MgAl2O4) has been studied by using the RBS technique. Implanted c
rystals were either annealed or post-irradiated with Ar ions at elevated te
mperatures and the depth profiles of fission products were analyzed. In uni
rradiated crystals, Cs diffusion occurs above 800 degrees C: Ar irradiation
reduces the diffusion temperature down to 600 degrees C. (C) 2000 Elsevier
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