The superconducting microbeam system at Bochum demonstrates that microbeam
systems can be successfully used as an implantation tool. The system, serve
d by a 4 MV-tandem accelerator, is able to produce a wide range of ion spec
ies with high purity. The advantage of a microprobe facility as an implante
r is the possibility to produce buried structures at a lateral resolution i
n the submicron range with a penetration depth between 100 nm and a few mu
m without the use of any resist. Because of the high demagnification of the
microprobe system the ion current density is increased two orders of magni
tude compared to conventional MeV implantation. In combination with the new
ly developed high energy ion projection technique, the system yields a very
fast implantation of structures at stoichiometric doses, thus allowing to
optimize the process of ion beam synthesis within reasonable time. This con
tribution gives an introduction to the technique of high energy ion project
ion and reports some first results of CoSi2 structures synthesized by impla
ntation of 1 MeV Co into Si. The experiments are performed using different
implantation temperatures, currents, and doses, and will be discussed in co
mparison to the conventional implantation technique. (C) 2000 Elsevier Scie
nce B.V. All rights reserved.