Channeled ion beam synthesis of HfSi2

Channeled implantations were carried out on Si(1 0 0) wafers kept at 600 de grees C with a 300 keV Hf2+ beam incident along the [1 0 0] direction. Samp les implanted with two fluences (2.3 x 10(17) and 1.5 x 10(17) Hf/cm(2)) we re characterised by RBS/Channeling, Glancing Incidence X-Ray Diffraction an d perturbed Angular Correlations. In the higher fluence sample a stoichiome tric 1660 Angstrom thick polycrystalline HfSi2 surface layer was formed aft er implantation. A multi-step annealing procedure (800 degrees C/900 degree s C/1000 degrees C) was found to favour layer stability as compared to a si mpler two-step anneal (700 degrees C/1000 degrees C). Minimum resistivity v alues of 60 mu Omega cm were obtained after the 1000 degrees C annealings. (C) 2000 Elsevier Science B.V. All rights reserved.