Citation
P. Boieriu et al., SIMS and XPS characterization of CdS/CdTe heterostructures grown by MBE, NUCL INST B, 161, 2000, pp. 975-979
Citations number
6
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
ISSN journal
0168583X
→ ACNP
Volume
161
Year of publication
2000
Pages
975 - 979
Database
ISI
SICI code
0168-583X(200003)161:<975:SAXCOC>2.0.ZU;2-G
Abstract
In this study we have grown epitaxial layers of wurtzite-CdS on CdTe((111)
over bar)B/Si substrates using molecular beam epitaxy. Indium was used to o
btain n-type doping of CdS. The concentration and uniformity of In was dete
rmined by secondary ion mass spectrometry (SIMS). Indium profiles were obta
ined for concentrations ranging from 5 x 10(17) to 1.4 x 10(21) cm(-3) and
agree well with the variation expected from the In flux. (C) 2000 Elsevier
Science B.V. All rights reserved.