In this study we have grown epitaxial layers of wurtzite-CdS on CdTe((111)
over bar)B/Si substrates using molecular beam epitaxy. Indium was used to o
btain n-type doping of CdS. The concentration and uniformity of In was dete
rmined by secondary ion mass spectrometry (SIMS). Indium profiles were obta
ined for concentrations ranging from 5 x 10(17) to 1.4 x 10(21) cm(-3) and
agree well with the variation expected from the In flux. (C) 2000 Elsevier
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