Ion-beam irradiation effects on Ni3N/Si bilayers

Nitrides, carbides and oxides are important ceramic materials for wide rang e of applications in coating, nuclear reactor and semiconductor technology. The study of their bonding properties to metals and semiconductors. for in stance via ion irradiation. is of great importance. In this work. We report on the effects induced by 100 and 450 keV Xe+ ions in 70-100 nm Ni3N layer s deposited on Si substrates. Low-energy irradiation at 80 it was found to cause a preferential nitrogen loss in the near-surface regions and an incre ase in surface roughness of the Ni3N him. After the 450 keV Xe+ ion irradia tion. strong mixing and the formation of Ni2Si and Si3N4 phases Were detect ed at the Ni3N/Si interface. These findings demonstrate the dissociation of Ni3N under ion bombardment and the competition of chemical driving forces and collision cascade mixing at the interface. (C) 2000 Elsevier Science B. V. All rights reserved.