Interface mixing in Ta/Si bilayers with Ar ions

We report on the room-temperature synthesis of the low-resistivity TaSi2 ph ase using ion-beam mixing of Ta/Si bilayers with Ar ions. The formation of the silicide phase is observed for different damage energies deposited at t he Tal Si interface. The variance Delta sigma(2) of the reacted (TaSi2) lay er thickness varies linearly with the ion fluence Phi and the reaction rate Delta sigma(2)/Phi, is proportional to the deposited damage energy density F-D. The measured mixing/reaction efficiency, Delta sigma(2)/Phi F-D = 10 +/- 1 nm(5)/keV, is in agreement with the value calculated by the model of compound formation under local thermal spikes. (C) 2000 Elsevier Science B. V. All rights reserved.