Citation
Pfp. Fichtner et al., He-induced cavity formation in silicon upon high-temperature implantation, NUCL INST B, 161, 2000, pp. 1038-1042
Citations number
16
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
ISSN journal
0168583X
→ ACNP
Volume
161
Year of publication
2000
Pages
1038 - 1042
Database
ISI
SICI code
0168-583X(200003)161:<1038:HCFISU>2.0.ZU;2-P
Abstract
40 keV He+ ions were implanted into (1 0 0) oriented Si single crystals to
a fluence of 9 x 10(15) cm(-2) at room-temperature or 350 degrees C. The im
plantations were performed at both. random or (0 0 1) Si channel directions
. The implantation damage and the in situ annealing effects during the He i
mplantations were investigated by transmission electron microscopy (TEM), R
utherford backscattering/channeling spectrometry (RBS/C) and elastic recoil
detection analysis (ERDA). Significant differences in the microstructure e
volution between the 350 degrees C and the room-temperature implanted and s
ubsequently annealed at 350 degrees C samples were observed. The results ar
e discussed in terms of a distinct Me bubble nucleation process. (C) 2000 E
lsevier Science B.V. All rights reserved.