Dependence of the optical properties on the ion implanted depth profiles in fused quartz after a sequential implantation with Si and Au ions

Fused quartz discs were implanted at room temperature (RT) with 2 MeV Si io ns, reimplanted with 10 MeV Au ions and then annealed in a reducing atmosph ere at 900 degrees C for 1 h (Si + Au samples). The same process was repeat ed. but first Bu ions were implanted. followed by Si ions (Au + Si samples) . RT optical absorption and photoluminescence (PL) studies were performed b efore and after annealing for the two kinds of reimplanted samples, as well as RES measurements for determining the Au implanted distributions. A depe ndence of the optical propel ties on the ion implanted depth profiles was o bserved. Indeed. these two implantation sequences show different behaviors in the absorption and PL spectra. The implications and the possible mechani sms concerning this behavior will be discussed iu this paper. (C) 2000 Else vier Science B.V. All rights reserved.