Evolution of GaAs1-xNx conduction states and giant Au/GaAs1-xNx Schottky barrier reduction studied by ballistic electron emission spectroscopy

Citation
M. Kozhevnikov et al., Evolution of GaAs1-xNx conduction states and giant Au/GaAs1-xNx Schottky barrier reduction studied by ballistic electron emission spectroscopy, PHYS REV B, 61(12), 2000, pp. R7861-R7864
Citations number
24
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
10980121 → ACNP
Volume
61
Issue
12
Year of publication
2000
Pages
R7861 - R7864
Database
ISI
SICI code
1098-0121(20000315)61:12<R7861:EOGCSA>2.0.ZU;2-D
Abstract
The evolution of GaAs1-xNx band structure at low nitrogen concentrations (u p to x=0.021) is studied by ballistic electron emission microscopy (BEEM) s pectra of Au/GaAs1-xNx heterostructures. Two peaks observed in the second d erivative BEEM spectra are identified with the contribution from the Gamma- and L-like bands of GaAs1-xNx. As the nitrogen concentration increases, th e energetic separation between these peaks increases, with a relative decre ase of the L-like band contribution to the BEEM current. In addition, we fo und a strong decrease of the Au/GaAs1-xNx Schottky barrier with the nitroge n incorporation, from similar to 0.92 eV at x=0 down to similar to 0.55 eV at x=0.021. The observed Schottky barrier reduction approximates the GaAs1- xNx band-gap reduction.