Aa. Bonapasta et M. Capizzi, Structure, kinetics, and vibrational properties of complexes formed by hydrogen and gallium vacancies in GaAs: A theoretical study, PHYS REV B, 61(12), 2000, pp. 8180-8186
In the last years, complexes formed by atomic H and gallium vacancies (V-Ga
) have been investigated in order to account for donor-acceptor bands obser
ved in the photoluminescence spectra of hydrogenated GaAs. New configuratio
ns for these complexes are investigated here, together with the kinetic pro
perties of the H donors that affect the complex stability critically. In ad
dition to the H donor, a peculiar V-Ga-H complex has been shown to behave a
s a donor. The electronic levels in the energy gap and several H vibrationa
l modes have been studied for the new and the old configurations of the H-V
-Ga complexes, as well as for the new donor. The new complexes are more sta
ble than those previously studied and can well account for the photolumines
cence results. The values of the H vibrational frequencies are quite differ
ent for the different types of complexes, which should permit a determinati
on of the microstructure of the H-V-Ga complexes by infrared spectroscopy.