Tellurium desorption kinetics from (112) Si: Si-Te binding energy

Transition-state theory was employed to model the tellurium adsorption char acteristics and to evaluate Te-Si binding energy on a (112) Si surface. Iso thermal desorption measurements of tellurium adsorbate-yielded rate paramet ers for the thermodynamic activation energies of adsorption and desorption. Quantitative surface analyses were made by auger electron spectroscopy and by temperature-programmed desorption mass spectrometry. The experimental r ate constants for adsorption and desorption of tellurium from Si surfaces w ere used in the surface adsorption model. Our analyses suggested a second-o rder Te desorption mechanism and, upon chemisorption, the Te-Si surface bin ding energy calculation yielded a value of 3.46+/-0.1 eV.