Dynamics of rough interfaces in chemical vapor deposition: Experiments anda model for silica films

Citation
F. Ojeda et al., Dynamics of rough interfaces in chemical vapor deposition: Experiments anda model for silica films, PHYS REV L, 84(14), 2000, pp. 3125-3128
Citations number
27
Categorie Soggetti
Physics
Journal title
PHYSICAL REVIEW LETTERS
ISSN journal
00319007 → ACNP
Volume
84
Issue
14
Year of publication
2000
Pages
3125 - 3128
Database
ISI
SICI code
0031-9007(20000403)84:14<3125:DORIIC>2.0.ZU;2-E
Abstract
We study the surface dynamics of silica films grown by low pressure chemica l vapor deposition. Atomic force microscopy measurements show that the surf ace reaches a scale invariant stationary state compatible with the Kardar-P arisi-Zhang (KPZ) equation in three dimensions. At intermediate times the s urface undergoes an unstable transient due to shadowing effects. By varying growth conditions and using spectroscopic techniques, we determine the phy sical origin of KPZ scaling to be a low value of the surface sticking proba bility, related to the surface concentration of reactive groups. We propose a stochastic equation that describes the qualitative behavior of our exper imental system.