Dielectric relaxation in Bi12SiO20 : Cr crystals

Citation
Tv. Panchenko et al., Dielectric relaxation in Bi12SiO20 : Cr crystals, PHYS SOL ST, 42(4), 2000, pp. 689-693
Citations number
22
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICS OF THE SOLID STATE
ISSN journal
10637834 → ACNP
Volume
42
Issue
4
Year of publication
2000
Pages
689 - 693
Database
ISI
SICI code
1063-7834(2000)42:4<689:DRIB:C>2.0.ZU;2-R
Abstract
A study is reported of the temperature and frequency dependences of the per mittivity and losses in Cr-doped Bi12SiO20 crystals at sonic frequencies an d in the range 300-800 K. A number of dielectric anomalies and a close-to-l inear Cole-Cole diagram have been observed. The results are discussed by in voking the concepts of electron hopping and screening of the induced polari zation through the relaxation of local lattice distortions. (C) 2000 MAIK " Nauka/Interperiodica".