Thin-film device processing relies heavily on the integration of a variety
of materials and a wide array of process steps. These include in some insta
nces, the integration of 'wet' (chemical etching) and 'dry' (deposition and
plasma etching) process steps. As substrates are stepped through the proce
ss sequence, there are many surfaces that ultimately become interfaces that
can have a dramatic impact on ultimate device performance. However, in thi
n-film R&D, these issues are not always carefully considered. This can have
severe consequences when adapting an R&D-developed process into pilot prod
uction, and finally, into manufacturing. In this paper, we explore the impa
ct of process integration issues on the microstructure and device performan
ce for three prominent photovoltaic thin-film technologies (cadmium telluri
de, copper indium diselenide, and amorphous silicon). We also consider the
impact of these concepts on future research directions in thin-film photovo
ltaics. Published in 2000 by John Wiley & Sons, Ltd.