Susceptor-based rapid thermal processing for forming ultra-shallow junctions

Authors
Atanos, AJ Daviet, JF Parihar, V
Citation
Aj. Atanos et al., Susceptor-based rapid thermal processing for forming ultra-shallow junctions, SOL ST TECH, 43(4), 2000, pp. 50
Citations number
10
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
SOLID STATE TECHNOLOGY
ISSN journal
0038111X → ACNP
Volume
43
Issue
4
Year of publication
2000
Database
ISI
SICI code
0038-111X(200004)43:4<50:SRTPFF>2.0.ZU;2-Q
Abstract
This article describes the successful formation of ultra-shallow junctions using a susceptor-based rapid-thermal-processing technology that avoids lat tice damage and temperature overshoot, which are typical problems with lamp -based systems. High-temperature processing (similar to 1150 degrees C) wit h the susceptor-based rapid-thermal-processing approach and its impact on s ilicon crystal structure will be discussed.