Dependences of the chemical potential shift and superconducting transitiontemperature on the hole concentration in La2-xSrxCuO4 and Bi2Sr2Ca1-xYxCu2O8+delta

Dependences of the superconducting transition temperature (T-c) on the hole concentration (n(h)) in La2-xSrxCuO4 and Bi2Sr2Ca1-xYxCu2O8+delta have bee n calculated using the interband model. The phase space for pair-transfer s cattering between the overlapping bands is governed by the position of the chemical potential. Downward shifts (Delta mu) of the electron chemical pot ential (mu) with n(h) have been found. The slope is partial derivative mu/p artial derivative n(h) approximate to 8 eV/hole in under-doped Bi2Sr2Ca1-xY xCu2O8+delta and it becomes smaller in optimally-doped and over-doped sampl es (similar to 1.2 eV/hole). In La2-xSrxCuO4 partial derivative mu/partial derivative n(h) is equal to 1.25 eV/hole in over-doped samples and similar to 0.4 eV/hole in under-doped samples at T = 80 K. The pseudogap leads to t he suppression of Delta mu(n(h)) up to n(h) approximate to 0.17 holes per C uO2 plane at T = 80 K. The shift of the chemical potential mu leads to the curve T-c(n(h)) with a maximum. The dependences Delta mu(n(h)) and T-c(n(h) ) for the systems considered agree with the experimental data.