Electron beam-enhanced oxynitridation of Si(100) by NO adsorption

The adsorption of NO on Si(100) and the electron irradiation effects of an NO-covered surface were studied by XPS, AES, high-resolution electron energ y-loss spectroscopy (HREELS), temperature-programmed desorption (TPD) and e lectron-stimulated desorption (ESD), Nitric oxide both molecularly and diss ociatively adsorbs on Si(100) at 110 K, The molecular and dissociative adso rption occurred simultaneously, and reached saturation. The thermal desorpt ion of molecularly adsorbed NO (NO(a)) peaks at similar to 200 K, Thermal d issociation of NO(a) was not detected from heating. Electron irradiation of Si(100) in an NO environment gave a dramatic decrease in the elemental Si LVV signal at 92 eV in AES, This indicates the formation of a silicon oxyni tride overlayer by electron-stimulated dissociation of NO(a), The overlayer thickness exhibited a linear dependence on the electron irradiation/NO exp osure time, An oxynitride growth rate of 0.02 nm min(-1) was obtained. Copy right (C) 2000 John Wiley & Sons, Ltd.