Adsorption studies of digermane and disilane on Ge(100)

Adsorption studies of digermane (Ge2H6) and disilane (Si2H6) on Ge(100) are reported. Temperature-programmed desorption (TPD) experiments suggest the existence of two hydrogen adsorption states in the submonolayer regime for both digermane and disilane, The TPD spectra observed for disilane on Ge(10 0) are qualitatively similar to previous studies of disilane adsorbed on th in epitaxial layers of germanium on Si(100), These spectra show the existen ce of an or-state arising from the germanium monohydride and a beta(1)-stat e arising from a silicon monohydride, The two-peak structure observed in th e hydrogen TPD spectra for digermane on Ce(100) suggests the existence of b oth germanium monohydride and germanium dihydride, about which there is dis agreement in the literature. However, high-resolution electron energy-loss spectroscopy and low-energy electron diffraction provide additional evidenc e for the existence of both germanium hydrides on the digermane/Ge(100) sys tem. Kinetic energy distributions of electronically desorbed H+ and hydroge n removal cross-sections obtained through electron-stimulated desorption ar e also presented for both systems. Copyright (C) 2000 John Wiley & Sons, Lt d.