In situ deposition of sputtered PZT films: control of the growth temperature by the sputtered lead flux

PZT (54/46) thin films were deposited in situ (without post-annealing treat ment) by r.f. magnetron sputtering on platinized silicon substrates. The pa rameters which have a strong influence on the perovskite phase formation ar e the sputtered lead Aux and the substrate temperature. For all the targets used in these experiments, which contain different lead excess, an equilib rium zone exists where the incorporated lead saturates at the right composi tion. The temperature at which this zone appears increased with increasing lead content in the target, i.e. when the lead species arrival at the subst rates increased. By using this self-control mechanism we have deposited PZT films at low temperature, i.e. 510 degrees C, which is largely compatible with silicon substrates. The electrical properties of the films have been e valuated. (C) 2000 Elsevier Science Ltd. All rights reserved.