The relationship between the structure and the microwave dielectric propert
ies of epitaxial Ba0.5Sr0.5TiO3 (BST) films has been investigated. Single-p
hase BST films (40-160 nm) have been deposited onto (100) MgO substrates by
pulsed laser deposition. As-deposited films show a significant tetragonal
distortion. The in-plane lattice parameters (a) are always larger than the
surface normal lattice parameters (c). The tetragonal distortion depends on
the thickness of the films and the post-deposition annealing conditions. F
ilms annealed at 900 degrees C show less tetragonal distortion than the as-
deposited film and the films annealed at higher temperatures. The distortio
n in the film is due to stress caused by the lattice mismatch and thermal e
xpansion coefficient differences between the film and the substrate. The di
electric constant and its change with de bias voltage of BST films on MgO a
t microwave frequencies increase with increasing annealing temperature from
900 degrees C to 1200 degrees C, which corresponds to an increase in the t
etragonal distortion.