Photoluminescence excitation spectroscopy of erbium-doped silicon-rich silicon oxide

Citation
Jh. Shin et al., Photoluminescence excitation spectroscopy of erbium-doped silicon-rich silicon oxide, APPL PHYS L, 76(15), 2000, pp. 1999-2001
Citations number
20
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
76
Issue
15
Year of publication
2000
Pages
1999 - 2001
Database
ISI
SICI code
0003-6951(20000410)76:15<1999:PESOES>2.0.ZU;2-A
Abstract
The 1.54 mu m Er3+ photoluminescence excitation (PLE) and photoluminescence (PL) spectra of erbium-doped silicon-rich silicon oxide (SRSO) are investi gated. Between 350 and 820 nm, PLE spectra are broad and featureless, and t he PL spectra are independent of the excitation wavelengths. The results in dicate that in erbium-doped SRSO, the Er3+ luminescence is dominated by a s ingle class of Er sites with a strong coupling to all the carriers in the s ilicon nanograins. (C) 2000 American Institute of Physics. [S0003-6951(00)0 3313-1].