Ordered semiconductor ZnO nanowire arrays and their photoluminescence properties

Authors
Li, Y Meng, GW Zhang, LD Phillipp, F
Citation
Y. Li et al., Ordered semiconductor ZnO nanowire arrays and their photoluminescence properties, APPL PHYS L, 76(15), 2000, pp. 2011-2013
Citations number
20
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
76
Issue
15
Year of publication
2000
Pages
2011 - 2013
Database
ISI
SICI code
0003-6951(20000410)76:15<2011:OSZNAA>2.0.ZU;2-O
Abstract
Ordered semiconductor ZnO nanowire arrays embedded in anodic alumina membra nes (AAM) were fabricated by generating alumina templates with nanochannels , electrodepositing Zn in them, and then oxidizing the Zn nanowire arrays. The polycrystalline ZnO nanowires with the diameters ranging from 15 to 90 nm were uniformly assembled into the hexagonally ordered nanochannels of th e AAM. Photoluminescence (PL) measurements show a blue PL band in the wavel ength range of 450-650 nm caused by the singly ionized oxygen vacancy in Zn O nanowires. (C) 2000 American Institute of Physics. [S0003-6951(00)01415-7 ].