Quantitative determination of the order parameter in epitaxial layers of ZnSnP2

Citation
S. Francoeur et al., Quantitative determination of the order parameter in epitaxial layers of ZnSnP2, APPL PHYS L, 76(15), 2000, pp. 2017-2019
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
76
Issue
15
Year of publication
2000
Pages
2017 - 2019
Database
ISI
SICI code
0003-6951(20000410)76:15<2017:QDOTOP>2.0.ZU;2-W
Abstract
X-ray diffraction is applied to determine the degree of order in partially ordered epitaxial layers of ZnSnP2 grown on GaAs. The Bragg-Williams order parameter, used as a scaling coefficient for the structure factor of supers tructure reflections, is extracted from the comparison of measured and calc ulated relative intensities of a set of carefully chosen reflections. The c alculated diffraction patterns are obtained from the dynamical theory of x- ray diffraction. The effect of antiphase domains on the width of superstruc ture reflections is discussed. Order parameters up to 30% were measured. (C ) 2000 American Institute of Physics. [S0003-6951(00)02315-9].