Refined model for spectroscopic ellipsometry analysis of SixGe1-x/Si strained heterostructures

Authors
Ferrieu, F
Citation
F. Ferrieu, Refined model for spectroscopic ellipsometry analysis of SixGe1-x/Si strained heterostructures, APPL PHYS L, 76(15), 2000, pp. 2023-2025
Citations number
23
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
76
Issue
15
Year of publication
2000
Pages
2023 - 2025
Database
ISI
SICI code
0003-6951(20000410)76:15<2023:RMFSEA>2.0.ZU;2-Z
Abstract
A simple model based on the optical stress birefringence induced by the lat tice mismatch in the epitaxy of a SixGa1-x layer on Si is discussed. With t his model, spectroscopic ellipsometry provides not only layer thickness and alloy composition, but also control of the coherently strained-to-unstrain ed material ratio. (C) 2000 American Institute of Physics. [S0003-6951(00)0 5415-2].