Piezoreflectance study of silicon carbon nitride nanorods

Citation
Ch. Hsieh et al., Piezoreflectance study of silicon carbon nitride nanorods, APPL PHYS L, 76(15), 2000, pp. 2044-2046
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
76
Issue
15
Year of publication
2000
Pages
2044 - 2046
Database
ISI
SICI code
0003-6951(20000410)76:15<2044:PSOSCN>2.0.ZU;2-3
Abstract
Detailed piezoreflectance (PzR) measurements of quasialigned silicon carbon nitride nanorods in the temperature range between 15 and 400 K were perfor med. The direct band-to-band transition energies E-g(d) at various temperat ures were determined accurately through line shape fit of the experimental PzR spectra. The temperature dependence of E-g(d) is analyzed by the Varshn i equation [Y. P. Varshni, Physica, (Amsterdam) 34, 149 (1967)] and an expr ession containing the Bose-Einstein occupation factor for phonons proposed by L. Vina, S. Logothetidis, and M. Cardona [Phys. Rev. B 30, 1979 (1984)]. The parameters that describe the temperature dependence of E-g(d) are eval uated and discussed. (C) 2000 American Institute of Physics. [S0003-6951(00 )05115-9].