Photoluminescence (PL) and electron-spin resonance have been used to study
intrinsic defects in fused silica during ion implantation and annealing pro
cedures designed to form and H-passivate Si crystallites. Under 250 nm (5 e
V) photon excitation, the unimplanted silica has PL bands at 390 (3.2 eV) a
nd 288 nm (4.3 eV). Implantation with 400 keV Si ions creates paramagnetic
defects but reduces both the 3.2 and 4.3 eV emissions. Implantation to dose
s greater than or equal to 2 x 10(17) Si cm(-2) produces an additional weak
emission band at 466 nm (2.7 eV). Annealing at 1000 degrees C and hydrogen
ation at 500 degrees C affect both the absolute and relative intensities of
the 390 and 288 nm emissions, and this is discussed with reference to know
n defects in the Si-crystallite/silica system. However, the emissions remai
n weak compared to those in unimplanted silica even though annealing remove
s the paramagnetic defects produced by implantation and the weak 466 nm emi
ssion observed for high doses. Since no other emission is evident at lower
energies, it is concluded that implantation either alters or destroys the d
efect configurations responsible for the 390 and 288 nm emissions or that i
t creates diamagnetic defects which offer competing nonradiative relaxation
channels. (C) 2000 American Institute of Physics. [S0003-6951(00)00515-5].