Changes in luminescence emission induced by proton irradiation: InGaAs/GaAs quantum wells and quantum dots

Authors
Leon, R Swift, GM Magness, B Taylor, WA Tang, YS Wang, KL Dowd, P Zhang, YH
Citation
R. Leon et al., Changes in luminescence emission induced by proton irradiation: InGaAs/GaAs quantum wells and quantum dots, APPL PHYS L, 76(15), 2000, pp. 2074-2076
Citations number
22
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
76
Issue
15
Year of publication
2000
Pages
2074 - 2076
Database
ISI
SICI code
0003-6951(20000410)76:15<2074:CILEIB>2.0.ZU;2-1
Abstract
The photoluminescence (PL) emission from InGaAs/GaAs quantum-well and quant um-dot (QD) structures are compared after controlled irradiation with 1.5 M eV proton fluxes. Results presented here show a significant enhancement in radiation tolerance with three-dimensional quantum confinement. Some additi onal radiation-induced changes in photocarrier recombination from QDs, whic h include a slight increase in PL emission with low and intermediate proton doses, are also examined. (C) 2000 American Institute of Physics. [S0003-6 951(00)01615-6].