On the main irradiation-induced defect in GaN

We show that the usual Arrhenius analysis of the main electron-irradiation- induced defect trap in n-type GaN, observed by deep-level transient spectro scopy (DLTS), is not sufficiently accurate. Instead, an exact fitting of th e DLTS spectrum for this trap reveals two components, each of which has a t hermal energy near 60 meV, not the apparent 140-200 meV, as given in other DLTS studies. This result resolves the discrepancy between Hall-effect and DLTS determinations of the thermal energy of this defect center. (C) 2000 A merican Institute of Physics. [S0003-6951(00)02615-2].