Temperature dependence of electron concentration in type-converted siliconby 1x10(17) cm(-2) fluence irradiation of 1 MeV electrons

The conduction type of boron (B)-doped silicon (Si) changes from p type int o n type by the 1 x 10(17) cm(-2) fluence irradiation (high-fluence irradia tion) of 1 MeV electrons. The temperature dependence of the electron concen tration n(T) obtained from Hall-effect measurements is reported. From the a nalysis of n(T), the density and energy level of the defects created by the high-fluence irradiation are determined to be 1.5 x 10(14) cm(-3) and E-C- 0.30 eV, respectively, where E-C is the energy level at the bottom of the c onduction band. Moreover, the compensated density is 9.5 x 10(13) cm(-3), w hich is in agreement with the density of B that acts as an acceptor, determ ined by Fourier-transform infrared spectroscopy. (C) 2000 American Institut e of Physics. [S0003-6951(00)03415-X].