Silver ion implantation in epitaxial La2/3Ca1/3MnO3 thin films: Large temperature coefficient of resistance for bolometric applications

Epitaxial films of La2/3Ca1/3MnO3 were successively implanted with 100 and 200 keV silver ions at fluences of 4.5 x 10(15) and 1 x 10(16) ions/cm(2), respectively, to achieve a fairly uniform implant distribution. The as-impl anted films are insulating and do not show a metal-insulator transition. Po stimplantation annealing at 950 degrees C shows a recovery of the high stru ctural quality of the films, along with an increase in the metal-insulator transition temperature (T-p), magnetoresistance, and the peak temperature c oefficient of resistance (TCR) at the transition. The peak TCR of 23% for m anganite films is clearly significant for bolometric applications. (C) 2000 American Institute of Physics. [S0003-6951(00)01315-2].