EXPERIMENTAL VALIDATION OF A LARGE-SIGNAL MESFET MODEL FOR SUBMICRON-GATE-LENGTH DEVICES

Authors
DAGOSTINO S PAOLONI C
Citation
S. Dagostino et C. Paoloni, EXPERIMENTAL VALIDATION OF A LARGE-SIGNAL MESFET MODEL FOR SUBMICRON-GATE-LENGTH DEVICES, Microwave and optical technology letters, 15(4), 1997, pp. 227-229
Citations number
5
Categorie Soggetti
Optics,"Engineering, Eletrical & Electronic
Journal title
Microwave and optical technology letters → ACNP
ISSN journal
08952477
Volume
15
Issue
4
Year of publication
1997
Pages
227 - 229
Database
ISI
SICI code
0895-2477(1997)15:4<227:EVOALM>2.0.ZU;2-G
Abstract
The performance of a physics-based large-signal MESFET model, previous ly published and experimentally validated for a gate length equal to o r greater than 1 mu m, has been evaluated for the submicron case. A sa tisfactory agreement for both the dc characteristics and the S paramet er derived from the model compared with experimental data assures the validity of the model for a 0.5-mu m gate-length MESFET process. (C) 1 997 John Wiley & Sons, Inc.