Sd. Ahn et al., Improvement of surface morphology of aluminum thin films grown by metallorganic chemical vapor deposition, EL SOLID ST, 3(4), 2000, pp. 186-188
Surface morphology of aluminum thin films grown by metallorganic chemical v
apor deposition has been improved by growing aluminum/titanium nitride mult
ilayers. When the aluminum films were deposited continuously, the reflectan
ce vs. deposition thickness curves showed a maximum reflectance at the comp
letion of coalescence of islands, and then showed a gradual decay with incr
easing aluminum thickness because of nonuniform grain growth. By inserting
1 nm titanium nitride layer grown by atomic layer deposition on aluminum la
yer at the maximum reflectance, the reflectance was recovered again to the
peak reflectance like a sinusoid waveform. Therefore, without considerable
loss of electrical conductivity surface smoothness of aluminum films has be
en able to be achieved by repeating the aluminum/titanium nitride multilaye
r depositions. (C) 2000 The Electrochemical Society. S1099-0062(99)10-085-3
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