Improvement of surface morphology of aluminum thin films grown by metallorganic chemical vapor deposition

Citation
Sd. Ahn et al., Improvement of surface morphology of aluminum thin films grown by metallorganic chemical vapor deposition, EL SOLID ST, 3(4), 2000, pp. 186-188
Citations number
6
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
ELECTROCHEMICAL AND SOLID STATE LETTERS
ISSN journal
10990062 → ACNP
Volume
3
Issue
4
Year of publication
2000
Pages
186 - 188
Database
ISI
SICI code
1099-0062(200004)3:4<186:IOSMOA>2.0.ZU;2-Q
Abstract
Surface morphology of aluminum thin films grown by metallorganic chemical v apor deposition has been improved by growing aluminum/titanium nitride mult ilayers. When the aluminum films were deposited continuously, the reflectan ce vs. deposition thickness curves showed a maximum reflectance at the comp letion of coalescence of islands, and then showed a gradual decay with incr easing aluminum thickness because of nonuniform grain growth. By inserting 1 nm titanium nitride layer grown by atomic layer deposition on aluminum la yer at the maximum reflectance, the reflectance was recovered again to the peak reflectance like a sinusoid waveform. Therefore, without considerable loss of electrical conductivity surface smoothness of aluminum films has be en able to be achieved by repeating the aluminum/titanium nitride multilaye r depositions. (C) 2000 The Electrochemical Society. S1099-0062(99)10-085-3 . All rights reserved.