Cathodoluminescence analysis of cleaved facets of a ZnSe p-n junction

ZnSe diodes grown on (100) GaAs substrates by molecular beam epitaxy were i nvestigated using cathodoluminesence (CL) measurements at sample temperatur es between 50 and 300 K. The CL line scans at different photon energies wer e performed on cleaved p-n junctions at 50 and 300 K, respectively. Taking into account surface recombination, carrier generation volume, carrier diff usion and internal built-in electric field and related carrier drift, the C L measurements from cleaved p-n junctions could be qualitatively explained. The charge depletion layer has a strong influence on the CL measurements. The calculated charge depletion width is in good agreement with CL measurem ents. The experimental data from the spatially resolved CL on the cleaved Z nSe diodes revealed important information of the carrier dynamics and recom bination processes in these devices. (C) 2000 American Institute of Physics . [S0021-8979(00)00508-9].