We report on an investigation of the optical properties of GaN quantum dots
(QDs) grown by means of metalorganic vapor phase epitaxy. The growth regim
e for GaN on AlxGa1-xN was observed to change from two- to three-dimensiona
l, forming GaN QDs, when Si was deposited on the AlxGa1-xN surface prior to
the GaN growth. These QDs showed a redshift of the photo luminescence (PL)
energy from the increased Coulomb energy induced by a compression of the e
xciton Bohr radius. Furthermore, a diminishing temperature-dependent shift
of the PL energy with decreasing QD size caused by a reduction of the longi
tudinal-optical phonon coupling was found. We also show that the size of th
e QDs is a critical parameter for the optical nonlinearities. For large dot
s, the dominant nonlinearity in the PL is the bandgap renormalization but w
hen the size of the dots was reduced below the critical size of 10 nm thick
and 30 nm diameter, the state-filling effect became dominant. (C) 2000 Ame
rican Institute of Physics. [S0021-8979(00)04708-3].