Preparation and properties of lead-zirconate-titanate ferroelectric thin films using radio frequency planar magnetron sputtering

Lead-zirconate-titanate [Pb(Zr52Ti48)O-3,PZT] thin films, 0.5 mu m thick, w ere deposited onto Pt/Si substrate at room temperature using the radio freq uency planar magnetron sputtering technique. A perovskite structure in the PZT thin film was obtained after the annealing processes. The annealing tem perature varied from 650 to 750 degrees C in this experiment to find the op timized annealing temperature. Using x-ray diffraction analysis, the lowest full width of the half maximum (110) plane was 0.23 degrees for the sample at 650 degrees C annealing temperature. The values of the remanent polariz ation Pr and coercive field E-c of the PZT thin film were 100 nC cm(-2) and 0.6 kV cm(-1), respectively, at 60 Hz. The measured pyroelectric coefficie nt in 0.5 mu m thin films was 3.12x10(-4) C/m(2) K at 50 degrees C. Their d ielectric constant and loss tangent were 494 and 0.072, respectively, at 1 kHz. The surface structure of the PZT thin film was examined using scanning electron microscopy and the grain size was in the range of 0.08-0.14 mu m. (C) 2000 American Institute of Physics. [S0021-8979(00)02508-1].