Orientation dependence of fatigue behavior in relaxor ferroelectric-PbTiO3thin films

Citation
V. Bornand et al., Orientation dependence of fatigue behavior in relaxor ferroelectric-PbTiO3thin films, J APPL PHYS, 87(8), 2000, pp. 3965-3972
Citations number
34
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
87
Issue
8
Year of publication
2000
Pages
3965 - 3972
Database
ISI
SICI code
0021-8979(20000415)87:8<3965:ODOFBI>2.0.ZU;2-B
Abstract
Pb[Yb1/2Nb1/2]O-3-PbTiO3 (PYbN-PT)/SrRuO3 (SRO) capacitors with Pt top elec trodes were grown by pulsed laser deposition onto (100)(pc) LaAlO3 (LAO) an d (111)(c) SrTiO3 (STO) substrates (the subscripts pc and c refer here to t he pseudocubic and cubic perovskite cells, respectively). Suitable changes in both the substrate orientation and processing conditions allowed the gro wth of perovskite structured ferroelectric films with various degrees of or ientation, from highly [001](pc)-oriented PYbN-PT/SRO/LAO to highly [111](p c)-oriented PYbN-PT/SRO/STO heterostructures. It was found that fatigue cha racteristics of such as-grown planar capacitors are strongly dependent on t heir crystalline orientation. In particular, [001](pc)-heteroepitaxial thin films result in fatigue-free capacitors up to 10(11) cycles, while [111](p c)-oriented heterostructures exhibit a marked degradation of the switchable polarization by ac voltage cycling. These data are consistent with recent findings of fatigue anisotropy in relaxor ferroelectric-PbTiO3 single cryst als. (C) 2000 American Institute of Physics. [S0021-8979(00)05508-0].